BUK7230-55A NXP Semiconductors, BUK7230-55A Datasheet - Page 4

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7230-55A

Manufacturer Part Number
BUK7230-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
BUK7230-55A_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
0.02
0.2
0.5
0.05
0.1
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 02 — 16 March 2010
10
−3
10
−2
Conditions
see
Figure 4
10
−1
N-channel TrenchMOS standard level FET
1
P
t
p
T
10
Min
-
-
BUK7230-55A
δ =
t
p
03na50
(s)
T
t
t
p
10
Typ
-
71.4
2
© NXP B.V. 2010. All rights reserved.
Max
1.7
-
K/W
Unit
K/W
4 of 13

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