BUK7230-55A NXP Semiconductors, BUK7230-55A Datasheet - Page 2

• Manufacturer Part Number: BUK7230-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK7230-55A_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK7230-55A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Peak drain current is limited by chip, not package.
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
DPAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
Conditions
T
R
T
T
T
T
t
I
T
T
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 34 A; V
All information provided in this document is subject to legal disclaimers.
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
sup
Rev. 02 — 16 March 2010
j
≤ 175 °C
p
GS
≤ 55 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Simplified outline
GS
= 50 Ω; V
Figure 1
Figure 1
SOT428 (DPAK)
1
Figure 3
N-channel TrenchMOS standard level FET
GS
and
mb
2
= 10 V;
3
3
[1]
BUK7230-55A
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
55
55
20
38
27
150
88
175
175
38
150
58
Version
SOT428
D
S
V
°C
°C
Unit
V
V
A
A
A
W
A
A
mJ
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