BUK7510-55AL NXP Semiconductors, BUK7510-55AL Datasheet - Page 6

• Manufacturer Part Number: BUK7510-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK7510-55AL_3
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
V
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
GS(pl)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
I
see
V
T
V
R
from contact screw on package to centre
of die; T
from drain lead 6mm from package to
centre of die; T
from source lead to source bond pad;
T
I
see
I
V
D
D
D
D
D
D
D
S
S
j
j
j
DS
DS
DS
DS
GS
GS
GS
DS
G(ext)
DS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 °C; see
= 25 A; V
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
Figure
Figure
Figure
Figure
Figure
Figure 15
Figure 14
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 30 V; T
= 10 V; I
= 10 V; I
= 0 V; V
= 10 Ω; T
j
= 25 °C
10; see
10; see
10; see
12; see
12; see
GS
DS
DS
S
Rev. 03 — 4 August 2009
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs; V
j
GS
GS
L
GS
GS
= 25 °C
= 25 A; T
= 25 A; T
= 44 V; V
= 44 V; T
= 0 V; T
j
= V
= V
= V
Figure 15
Figure 16
= 1.2 Ω; V
= +20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
= 25 °C
j
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 11
Figure 11
Figure 13
Figure 13
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
GS
j
j
j
= 25 °C;
= -55 °C;
= 175 °C;
= 175 °C;
= 25 °C;
= 25 °C;
j
j
j
GS
= 175 °C
= 25 °C
j
= -55 °C
= 25 °C
= 25 °C
= 25 °C
= 10 V;
= 10 V;
GS
= 0 V;
N-channel TrenchMOS standard level FET
BUK7510-55AL
Min
50
55
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.05
2
2
-
8.5
124
22
50
5
4710
980
560
33
117
132
95
3.5
4.5
7.5
0.85
73
430
© NXP B.V. 2009. All rights reserved.
Max
-
-
4
4.4
-
500
10
100
100
20
10
-
-
-
-
6280
1180
770
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
nH
H
nH
V
ns
nC
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