BUK7510-55AL NXP Semiconductors, BUK7510-55AL Datasheet - Page 8

• Manufacturer Part Number: BUK7510-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7510-55AL_3
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
(V)
DSon
18
14
10
5
4
3
2
1
0
6
−60
junction temperature
of gate-source voltage; typical values
5
0
10
60
max
min
typ
15
120
V
GS
T
003aaa730
j
(V)
(°C)
03aa32
180
20
Rev. 03 — 4 August 2009
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
1.5
0.5
a
−1
−2
−3
−4
−5
−6
2
1
0
gate-source voltage
-60
factor as a function of junction temperature
0
N-channel TrenchMOS standard level FET
0
2
BUK7510-55AL
min
60
typ
4
120
max
V
© NXP B.V. 2009. All rights reserved.
GS
T
j
(V)
03ne89
( ° C)
03aa35
180
6
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