BUK7510-55AL NXP Semiconductors, BUK7510-55AL Datasheet - Page 7

• Manufacturer Part Number: BUK7510-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7510-55AL_3
Product data sheet
Fig 6.
Fig 8.
(A)
I
g
400
300
200
100
(S)
D
fs
40
35
30
25
20
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
20
18
16
14
12
2
20
4
40
V
GS
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
(V) = 10
6
60
003aaa729
8
003aaa732
I
V
D
DS
(A)
(V)
10
80
Rev. 03 — 4 August 2009
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
150
100
I
D
20
15
10
50
5
0
0
of drain current; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
N-channel TrenchMOS standard level FET
T
j
= 175 ° C
7
2
100
8
BUK7510-55AL
4
9
200
T
10
j
= 25 ° C
6
V
GS
(V) = 20
300
© NXP B.V. 2009. All rights reserved.
003aaa733
8
003aaa731
I
V
D
GS
(A)
(V)
400
10
7 of 13