BUK752R7-30B NXP Semiconductors, BUK752R7-30B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK752R7-30B

Manufacturer Part Number
BUK752R7-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK752R7-30B
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V loads
Automotive systems
Continuous current is limited by package.
BUK752R7-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Conditions
T
V
see
T
V
see
I
R
T
T
D
j
mb
j(init)
j
GS
GS
GS
GS
≥ 25 °C; T
= 75 A; V
= 25 °C; see
Figure
Figure
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
11; see
sup
j
D
D
≤ 175 °C
mb
GS
= 25 A; V
= 25 A; T
≤ 30 V;
Figure 13
= 25 °C;
= 10 V;
Figure 2
Figure 3
Figure 12
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
DS
j
= 25 °C;
= 24 V;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
2.3
-
29
Max Unit
30
75
300
2.7
2.3
-
V
A
W
mΩ
J
nC

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BUK752R7-30B Summary of contents

Page 1

... BUK752R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B Min Typ Max - - - [ 241 [ ...

Page 4

... Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 03ng27 = 10 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK752R7-30B Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET Min Typ - - - 60 03ng28 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B Min Typ Max 4 500 - 0.02 ...

Page 7

... DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET 5 R DSon (mΩ Drain-source on-state resistance as a function of drain current; typical values ...

Page 8

... Label 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...

Page 9

... ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET 0 − function of drain-source voltage; typical values 03nh09 0.8 1.0 V (V) SD © NXP B.V. 2010. All rights reserved. ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK752R7-30B separated from data sheet BUK75_76_7E2R7_30B_3. Product data All information provided in this document is subject to legal disclaimers. ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK752R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 June 2010 Document identifier: BUK752R7-30B ...

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