BUK752R7-30B NXP Semiconductors, BUK752R7-30B Datasheet - Page 7

• Manufacturer Part Number: BUK752R7-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK752R7-30B
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
350
280
210
140
70
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
20
10
7
6
2
4
min
5.5
5
4.5
4
typ
6
Label is V
4
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
V
GS
DS
(V)
03nh14
03aa35
(V)
(V)
10
6
Rev. 04 — 7 June 2010
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
100
75
50
25
5
4
3
2
1
0
of drain current; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK752R7-30B
40
15
60
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
(V)
(A)
03nh13
03nh11
20
80
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