BUK752R7-30B NXP Semiconductors, BUK752R7-30B Datasheet - Page 5

• Manufacturer Part Number: BUK752R7-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK752R7-30B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
Conditions
see
vertical in still air
−4
Rev. 04 — 7 June 2010
Figure 4
10
−3
10
−2
N-channel TrenchMOS standard level FET
P
10
t
p
−1
T
BUK752R7-30B
t
p
δ =
Min
-
-
(s)
03ng28
T
t
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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