BUK752R7-30B NXP Semiconductors, BUK752R7-30B Datasheet - Page 4

• Manufacturer Part Number: BUK752R7-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK752R7-30B
Product data sheet
Fig 1.
Fig 3.
(A)
I
250
200
150
100
D
50
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
Capped at 75 A due to package
50
(A)
I
D
10
10
10
10
1
4
3
2
10
−1
100
Limit R
Capped at 75 A due to package
150
DSon
All information provided in this document is subject to legal disclaimers.
T
mb
= V
03ng51
(°C)
DS
200
1
/I
D
Rev. 04 — 7 June 2010
Fig 2.
P
(%)
der
120
DC
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS standard level FET
50
V
DS
1 ms
10 ms
100 ms
t
100 μs
(V)
p
BUK752R7-30B
= 10 μs
100
03ng27
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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