BUK7880-55A NXP Semiconductors, BUK7880-55A Datasheet - Page 5

• Manufacturer Part Number: BUK7880-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BUK7880-55A_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
Parameter
drain-source breakdown voltage I
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance V
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
V
V
I
see
V
see
V
V
I
I
V
D
D
D
S
S
DS
GS
GS
GS
DS
GS
GS
T
T
T
T
T
T
T
T
T
= 15 A; V
= 20 A; dI
= 250 A; V
= 1 mA; V
= 10 A; V
Rev. 01 — 1 November 2007
j
j
j
j
j
j
j
j
j
Figure 14
Figure 12
= 55 V; V
= 20 V; V
= 10 V; I
= 0 V; V
= 30 V; R
= 10 V; R
= 10 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
DD
GS
S
DS
DS
D
/dt = 100 A/ s;
GS
L
G
GS
= 10 A; see
= 0 V; see
= 44 V; V
DS
R
= V
= 1.2 ;
= 25 V; f = 1 MHz;
= 10
= 0 V
= 30 V
= 0 V
= 0 V
GS
; see
GS
Figure 15
Figure 9
Figure 6
= 10 V;
N-channel TrenchMOS standard level FET
and
8
BUK7880-55A
Min
55
50
2
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
68
-
12
2.5
5
374
92
62
8
52
17
9
0.85
33
31
© NXP B.V. 2007. All rights reserved.
Max
-
-
4
-
4.4
10
500
100
80
148
-
-
-
500
110
85
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 13
A
A