BUK7880-55A NXP Semiconductors, BUK7880-55A Datasheet - Page 8

• Manufacturer Part Number: BUK7880-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7880-55A_1
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source current as a function of source-drain
(A)
(A)
I
D
I
S
15
12
25
20
15
10
9
6
3
0
5
0
V
function of gate-source voltage; typical values
V
voltage; typical values
0.0
0
DS
GS
= 15 V
= 0 V
T
j
0.4
= 150 C
2
T
j
= 150 C
0.8
4
T
j
= 25 C
T
j
= 25 C
1.2
6
V
V
003aab526
003aab521
GS
SD
(V)
(V)
Rev. 01 — 1 November 2007
1.6
8
Fig 14. Gate-source voltage as a function of gate
Fig 16. Single-pulse and repetitive avalanche rating;
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive.
10
10
V
(V)
(A)
I
GS
10
AL
10
-1
-2
1
8
6
4
2
0
10
T
charge; typical values
See
avalanche current as a function of avalanche
time
0
j
-3
= 25 C; I
N-channel TrenchMOS standard level FET
Table note 1
V
DS
10
D
(V) = 14
-2
= 10 A
j
j
= 25 C.
= 150 C.
5
of
Table 3
BUK7880-55A
10
-1
Limiting values.
10
V
DS
1
(V) = 44
Q
© NXP B.V. 2007. All rights reserved.
(1)
(2)
(3)
G
t
003aab522
AL
003aab528
(nC)
(ms)
15
10
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