BUK7880-55A NXP Semiconductors, BUK7880-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7880-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7880-55A_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R
(m )
DSon
(A)
180
150
120
I
50
D
40
30
20
10
90
60
30
0
0
T
function of drain-source voltage; typical values
T
of drain current; typical values
0
j
j
0
= 25 C
= 25 C
V
GS
(V) = 6
10
2
20
4
30
6
8
V
10
GS
40
8
(V) = 20
003aab524
003aab523
V
I
D
DS
(A)
(V)
7
6.5
6
5.5
5
4.5
12
10
9.5
9
8.5
8
7.5
15
20
Rev. 01 — 1 November 2007
50
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
90
80
70
60
50
40
2
1
0
T
of gate-source voltage; typical values
factor as a function of junction temperature
a
-60
j
5
= 25 C; I
=
N-channel TrenchMOS standard level FET
----------------------------- -
R
DSon 25 C
-20
R
DSon
D
= 10 A
10
20
BUK7880-55A
60
100
15
© NXP B.V. 2007. All rights reserved.
V
GS
140
003aab525
(V)
03nc24
T
j
( C)
180
20
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