BUK7880-55A NXP Semiconductors, BUK7880-55A Datasheet - Page 7

• Manufacturer Part Number: BUK7880-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7880-55A_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
(S)
g
fs
5
4
3
2
1
0
9
8
7
6
5
I
junction temperature
T
drain current; typical values
D
60
5
j
= 1 mA; V
= 25 C; V
0
DS
DS
= V
10
= 15 V
GS
60
max
min
typ
15
120
I
D
003aab527
T
(A)
j
( C)
03aa32
Rev. 01 — 1 November 2007
180
20
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
I
(pF)
10
10
10
10
10
10
D
10
10
C
10
3
2
1
2
3
4
5
6
10
T
gate-source voltage
V
as a function of drain-source voltage; typical
values
0
j
GS
-1
= 25 C; V
N-channel TrenchMOS standard level FET
= 0 V; f = 1 MHz
DS
= V
1
2
GS
min
BUK7880-55A
typ
10
4
max
V
© NXP B.V. 2007. All rights reserved.
V
GS
DS
003aab520
C
C
C
iss
oss
rss
(V)
(V)
03aa35
10
6
2
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