2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 15

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

2N7002PV

Manufacturer Part Number
2N7002PV
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
2N7002PV
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 August 2010
salesaddresses@nxp.com
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
60 V, 350 mA N-channel Trench MOSFET
2N7002PV
© NXP B.V. 2010. All rights reserved.
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