2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 10
![Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415245/sot666_3d_sml.gif)
2N7002PV
Manufacturer Part Number
2N7002PV
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002PV.pdf
(16 pages)
Available stocks
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Part Number:
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Manufacturer:
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Quantity:
20 000
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Part Number:
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NXP Semiconductors
8. Test information
2N7002PV
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 17. Duty cycle definition
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 August 2010
P
t
1
t
2
duty cycle δ =
60 V, 350 mA N-channel Trench MOSFET
006aaa812
t
t
t
1
2
2N7002PV
© NXP B.V. 2010. All rights reserved.
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