2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 8

• Manufacturer Part Number: 2N7002PV
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2N7002PV
Product data sheet
Fig 10. Per transistor: Transfer characteristics: drain
Fig 12. Per transistor: Gate-source threshold voltage
V
GS(th)
(A)
(V)
I
(1) T
(2) T
(1) maximum values
(2) typical values
(3) minimum values
D
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.0
1.0
0.0
−60
0.0
V
current as a function of gate-source voltage;
typical values
I
as a function of ambient temperature
D
amb
amb
DS
= 0.25 mA; V
> I
= 25 °C
= 150 °C
D
1.0
× R
0
DSon
DS
2.0
= V
(2)
(1)
(2)
(3)
60
GS
(1)
3.0
(1)
120
(2)
4.0
T
All information provided in this document is subject to legal disclaimers.
amb
017aaa021
017aaa023
V
GS
(°C)
(V)
180
5.0
Rev. 1 — 5 August 2010
Fig 11. Per transistor: Normalized drain-source
Fig 13. Per transistor: Input, output and reverse
(pF)
C
(1) C
(2) C
(3) C
a
10
2.4
1.8
1.2
0.6
0.0
10
1
2
10
−60
on-state resistance as a function of ambient
temperature; typical values
f = 1 MHz; V
transfer capacitances as a function of
drain-source voltage; typical values
a
−1
iss
oss
rss
=
60 V, 350 mA N-channel Trench MOSFET
-----------------------------
R
DSon 25°C
R
DSon
0
(
GS
1
= 0 V
(1)
(2)
(3)
)
60
10
2N7002PV
120
V
© NXP B.V. 2010. All rights reserved.
T
DS
amb
017aaa022
017aaa024
(V)
(°C)
180
10
2
8 of 16