PMGD290XN NXP Semiconductors, PMGD290XN Datasheet - Page 2

• Manufacturer Part Number: PMGD290XN
• Description: Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 12762
Product data
Type number
PMGD290XN
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Single device conducting.
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Ordering information
Limiting values
Package
Name
SC-88
Description
Plastic surface mounted package; 6 leads
Conditions
25 C
25 C
T
T
T
T
Rev. 01 — 26 February 2004
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
T
j
j
Dual N-channel TrenchMOS™ extremely low level FET
150 C
150 C; R
Figure 1
GS
GS
= 4.5 V;
= 4.5 V;
p
p
GS
10 s;
10 s
= 20 k
Figure 2
Figure 2
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMGD290XN
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
55
55
Max
20
20
0.86
0.54
1.72
0.41
+150
+150
0.34
0.69
12
Version
SOT363
2 of 12
Unit
V
V
V
A
A
A
W
A
A
C
C