PMGD290XN NXP Semiconductors, PMGD290XN Datasheet - Page 9

• Manufacturer Part Number: PMGD290XN
• Description: Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Package outline
Fig 14. SOT363 (SC-88).
9397 750 12762
Product data
Plastic surface mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
Rev. 01 — 26 February 2004
1.3
e
w
B
M
B
0.65
e
Dual N-channel TrenchMOS™ extremely low level FET
1
SC-88
scale
EIAJ
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.2
EUROPEAN
w
L p
Q
PMGD290XN
0.1
A
y
c
X
v
ISSUE DATE
M
97-02-28
A
SOT363
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