PMGD290XN NXP Semiconductors, PMGD290XN Datasheet - Page 3

• Manufacturer Part Number: PMGD290XN
• Description: Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12762
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
I D
T
P
P der
10 -1
10 -2
(%)
sp
120
der
10
80
40
1
0
= 25 C; I
function of solder point temperature.
10 -1
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
100%
Limit R DSon = V DS / I D
100
GS
= 4.5 V
150
T sp ( C)
1
03aa17
200
Rev. 01 — 26 February 2004
DC
Dual N-channel TrenchMOS™ extremely low level FET
Fig 2. Normalized continuous drain current as a
I
I der
(%)
120
der
80
40
0
function of solder point temperature.
=
0
-------------------
I
D 25 C
10
I
D
50
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100 s
1 ms
t p = 10 s
10 ms
100 ms
100
PMGD290XN
V DS (V)
150
T sp ( C)
03an14
03aa25
10 2
200
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