PMGD290XN NXP Semiconductors, PMGD290XN Datasheet - Page 7

• Manufacturer Part Number: PMGD290XN
• Description: Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12762
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
GS
1.5
0.5
= 0.25 mA; V
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
max
typ
min
60
(pF)
C
10 2
10
120
1
10 -1
T j ( C)
03al82
Rev. 01 — 26 February 2004
180
1
Dual N-channel TrenchMOS™ extremely low level FET
Fig 10. Sub-threshold drain current as a function of
10
(A)
I D
T
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03an00
min
DS
10 2
= 5 V
0.4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
typ
0.8
PMGD290XN
1.2
max
V GS (V)
03an65
1.6
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