PMGD290XN NXP Semiconductors, PMGD290XN Datasheet - Page 8

• Manufacturer Part Number: PMGD290XN
• Description: Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12762
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
0.8
0.6
0.4
0.2
= 25 C and 150 C; V
1
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
150 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03am99
Rev. 01 — 26 February 2004
1.2
Dual N-channel TrenchMOS™ extremely low level FET
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 1 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 10 V
DD
= 10 V
0.2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.4
PMGD290XN
0.6
Q G (nC)
03an01
0.8
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