PSMN009-100B NXP Semiconductors, PSMN009-100B Datasheet - Page 5

• Manufacturer Part Number: PSMN009-100B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN009-100B_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
0.02
δ = 0.5
0.2
0.1
0.05
single pulse
10
−5
10
−4
Conditions
see
minimum footprint; mounted on
a printed-circuit board
Rev. 02 — 6 July 2009
Figure 4
10
−3
N-channel TrenchMOS SiliconMAX standard level FET
10
−2
10
−1
P
t
p
1
PSMN009-100B
T
Min
-
-
t
δ =
p
(s)
03af48
T
t
t
p
10
Typ
-
50
© NXP B.V. 2009. All rights reserved.
Max
0.65
-
Unit
K/W
K/W
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