PSMN009-100P NXP Semiconductors, PSMN009-100P Datasheet - Page 5

• Manufacturer Part Number: PSMN009-100P
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN009-100P
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
0.05
0.02
single pulse
δ = 0.5
0.2
0.1
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 4 — 27 December 2011
10
−3
N-channel TrenchMOS SiliconMAX standard level FET
vertical in free air
Conditions
see
10
Figure 4
−2
10
−1
P
t
p
1
T
PSMN009-100P
t
Min
-
-
δ =
p
(s)
03af48
T
t
t
p
10
Typ
-
60
© NXP B.V. 2011. All rights reserved.
-
Max
0.65
Unit
K/W
K/W
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