PSMN1R7-60BS NXP Semiconductors, PSMN1R7-60BS Datasheet - Page 7

• Manufacturer Part Number: PSMN1R7-60BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R7-60BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(m Ω )
DSon
(A)
I
10
10
10
10
10
10
D
12
10
−1
−2
−3
−4
−5
−6
8
6
4
2
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
5
2
min
10
typ
4
15
max
V
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GS
V
003aag658
GS
(V)
(V)
03aa35
Rev. 2 — 29 February 2012
20
6
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
(V)
DSon
10
5
4
3
2
1
0
8
6
4
2
0
−60
junction temperature
of drain current; typical values
0
V
GS
(V) = 4.5
0
50
PSMN1R7-60BS
60
4.8
max
min
typ
100
120
5.0
20.0
© NXP B.V. 2012. All rights reserved.
5.5
I
003aaf751
003aad280
T
D
j
6.0
10.0
(A)
(°C)
150
180
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