PSMN1R7-60BS NXP Semiconductors, PSMN1R7-60BS Datasheet - Page 3

• Manufacturer Part Number: PSMN1R7-60BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R7-60BS
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
10
300
240
180
120
10
60
-1
4
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
Limit R
50
(1)
DSon
= V
100
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
003aaf754
mb
1
( ° C)
200
Rev. 2 — 29 February 2012
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN1R7-60BS
100
V
DS
(V)
150
© NXP B.V. 2012. All rights reserved.
T
003aaf753
mb
t
100 μ s
1 ms
10 ms
100 ms
DC
p
03aa16
(°C)
=10 μ s
10
200
2
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