PSMN1R7-60BS NXP Semiconductors, PSMN1R7-60BS Datasheet - Page 6

• Manufacturer Part Number: PSMN1R7-60BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN1R7-60BS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
fs
(pF)
250
200
150
100
10
10
10
10
C
50
0
5
4
3
2
10
drain current; typical values
function of gate-source voltage, typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
-1
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
1
…continued
60
10
I
Conditions
I
see
I
V
V
S
S
S
90
DS
DS
V
= 25 A; V
= 25 A; dI
= 25 A; dI
GS
All information provided in this document is subject to legal disclaimers.
C
C
003aaf742
003aaf746
Figure 17
= 30 V
= 30 V
I
iss
D
(V)
rss
(A)
10
120
Rev. 2 — 29 February 2012
GS
S
S
2
/dt = -100 A/µs; V
/dt = -100 A/µs; V
= 0 V; T
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
j
= 25 °C;
Fig 6.
Fig 8.
(A)
(A)
I
I
D
D
200
150
100
GS
GS
80
60
40
20
50
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
= 0 V;
= 0 V;
0
0
10
8
0.5
T
j
5
= 175 ° C
6
2
PSMN1R7-60BS
1
Min
-
-
-
4
V
T
Typ
0.8
57
80
1.5
GS
j
= 25 ° C
V
© NXP B.V. 2012. All rights reserved.
GS
(V) = 4
003aaf743
003aad674
V
DS
(V)
4.5
-
-
Max
1.2
(V)
6
2
Unit
V
ns
nC
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