PSMN1R7-60BS NXP Semiconductors, PSMN1R7-60BS Datasheet - Page 2

• Manufacturer Part Number: PSMN1R7-60BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN1R7-60BS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN1R7-60BS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2.
Continuous current is limited by package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base;
connected to drain
D2PAK
Package
Name
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
T
V
pulsed; t
T
Conditions
T
V
T
pulsed; t
V
R
j
j
mb
mb
GS
GS
GS
GS
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; Unclamped
Rev. 2 — 29 February 2012
p
p
Simplified outline
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
SOT404 (D2PAK)
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
1
mb
= 25 °C; see
= 25 °C
2
GS
3
D
= 20 kΩ
= 120 A; V
Figure 1
Figure 1
Figure 3
sup
Graphic symbol
PSMN1R7-60BS
≤ 60 V;
mbb076
G
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2012. All rights reserved.
D
S
Version
SOT404
Max
60
60
20
120
120
1076 A
306
175
175
260
120
1076 A
913
Unit
V
V
V
A
A
W
°C
°C
°C
A
mJ
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