SI2302DS NXP Semiconductors, SI2302DS Datasheet - Page 2

• Manufacturer Part Number: SI2302DS
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09107
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
D
D
DM
S
DS
tot
j
DS
GS
tot
stg
j
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
Quick reference data
Limiting values
Conditions
T
T
T
V
V
Conditions
T
T
T
T
T
Rev. 02 — 20 November 2001
j
sp
sp
j
sp
sp
sp
sp
sp
GS
GS
= 25 to 150 C
= 25 to 150 C
= 25 C; V
= 25 C
= 25 C; V
= 70 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 4.5 V; I
= 2.5 V; I
Figure 1
D
D
N-channel enhancement mode field-effect transistor
GS
GS
GS
= 3.6 A
= 3.1 A
= 4.5 V
= 4.5 V;
= 4.5 V;
p
10 s;
Figure 2
Figure 2
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
56
77
Min
65
65
SI2302DS
Max
20
2.5
0.83
150
85
115
Max
20
2.5
2
10
0.83
+150
+150
0.7
8
2 of 12
Unit
V
A
W
m
m
Unit
V
V
A
A
A
W
A
C
C
C