SI2302DS NXP Semiconductors, SI2302DS Datasheet - Page 6

• Manufacturer Part Number: SI2302DS
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09107
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
R DSon
j
j
= 25 C
= 25 C
( )
0.09
0.08
0.07
0.06
0.05
function of drain-source voltage; typical values.
0.1
of drain current; typical values.
(A)
I D
10
8
6
4
2
0
0
0
T j = 25 ºC
2
0.5
4.5 V
4
3 V
6
2.5 V
1
V GS = 2.5 V
V GS = 1.5V
V DS (V)
8
I D (A)
4.5 V
03ae93
03ae94
3 V
2 V
10
1.5
Rev. 02 — 20 November 2001
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
= 25 C and 150 C; V
=
(A)
function of gate-source voltage; typical values.
factor as a function of junction temperature.
I D
1.6
1.2
0.8
0.4
a
10
--------------------------- -
R
2
0
8
6
4
2
0
DSon 25 C
-60
R
0
DSon
V DS > I D x R DSon
T j = 150 ºC
0
1
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
DS
60
25 ºC
I
D
R
2
DSon
120
SI2302DS
V GS (V)
T
j
(ºC)
03ae95
03ad57
180
3
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