SI2302DS NXP Semiconductors, SI2302DS Datasheet - Page 4

• Manufacturer Part Number: SI2302DS
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 09107
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
T
sp
= 25 C
thermal resistance from junction to solder point mounted on a metal clad substrate;
Thermal characteristics
Z th(j-sp)
(K/W)
10 3
10 2
10
1
10 -4
0.2
0.1
0.05
0.02
= 0.5
7.1 Transient thermal impedance
single pulse
10 -3
Rev. 02 — 20 November 2001
10 -2
Conditions
N-channel enhancement mode field-effect transistor
10 -1
1
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
P
t p
Figure 4
T
t p (s)
=
SI2302DS
03ae91
t p
T
t
10
Value Unit
150
4 of 12
K/W