SI2302DS NXP Semiconductors, SI2302DS Datasheet - Page 7

• Manufacturer Part Number: SI2302DS
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09107
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
I
V
D
V GS(th)
GS
= 1 mA; V
(V)
1.2
0.8
0.4
junction temperature.
= 0 V; f = 1 MHz
0
-60
DS
= V
0
GS
typ
min
60
120
(pF)
C
10 3
10 2
10
T j (ºC)
10 -1
03ag05
180
Rev. 02 — 20 November 2001
1
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
10
T
j
= 25 C; V
(A)
I D
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
V DS (V)
gate-source voltage.
C oss
C iss
C rss
0
03ae98
10 2
DS
= 5 V
0.4
min
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
0.8
typ
SI2302DS
V GS (V)
03ah78
1.2
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