SI2302DS NXP Semiconductors, SI2302DS Datasheet - Page 5

• Manufacturer Part Number: SI2302DS
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09107
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
V
V
V
Rev. 02 — 20 November 2001
D
D
S
DS
GS
GS
GS
DS
DD
GS
DD
T
T
= 1.6 A; V
= 10 A; V
= 1 mA; V
j
j
= 20 V; V
= 8 V; V
= 4.5 V; I
= 2.5 V; I
= 5 V; I
= 10 V; V
= 0 V; V
= 10 V; R
= 25 C
= 55 C
D
GS
DS
DS
GS
= 3.6 A
D
D
GS
DS
GS
L
N-channel enhancement mode field-effect transistor
= V
= 3.6 A;
= 3.1 A;
= 10 V; f = 1 MHz;
= 5.5 ; V
= 0 V;
= 0 V
= 0 V
= 0 V
= 4.5 V; I
GS
;
Figure 12
Figure 9
Figure 7
Figure 7
GS
D
= 3.6 A;
= 4.5 V; R
and
and
Figure 11
Figure 13
8
8
G
= 6
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Min
20
0.65
SI2302DS
Typ
0.01
10
56
77
8
5.4
0.65
1.6
230
125
80
12
23
50
34
0.8
Max
1.0
10
100
115
10
20
35
100
50
1.2
85
5 of 12
Unit
V
V
nA
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A