BLF6G10LS-260PRN NXP Semiconductors, BLF6G10LS-260PRN Datasheet - Page 12

• Manufacturer Part Number: BLF6G10LS-260PRN
• Description: 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Abbreviations
BLF6G10L-260PRN_LS-260PRN
Product data sheet
Table 11.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
Abbreviations
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Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 1 — 12 August 2010
BLF6G10L(S)-260PRN
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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