BLF6G10LS-260PRN NXP Semiconductors, BLF6G10LS-260PRN Datasheet - Page 2

• Manufacturer Part Number: BLF6G10LS-260PRN
• Description: 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF6G10L-260PRN_LS-260PRN
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Pin
BLF6G10L-260PRN (SOT539A)
1
2
3
4
5
BLF6G10LS-260PRN (SOT539B)
1
2
3
4
5
Type number
BLF6G10L-260PRN
BLF6G10LS-260PRN -
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 700 MHz to 1000 MHz frequency range
Connected to flange.
Pinning
Ordering information
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 1 — 12 August 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
BLF6G10L(S)-260PRN
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
© NXP B.V. 2010. All rights reserved.
3
4
3
4
1
2
1
2
Version
SOT539A
SOT539B
sym117
sym117
2 of 16
5
5