BLF6G10LS-260PRN NXP Semiconductors, BLF6G10LS-260PRN Datasheet - Page 9

• Manufacturer Part Number: BLF6G10LS-260PRN
• Description: 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 10.
BLF6G10L-260PRN_LS-260PRN
Product data sheet
Component
C4, C5, C9,
C11, C12
C1, C10, C14 multilayer ceramic chip capacitor TDK
C7, C13
R3, R6
Bill of materials
Description
multilayer ceramic chip capacitor ATC 800B
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
copper foil strip
standard components:
N-connector male
N-connector female
4 × bolt M3
4 × spring washer M3
DC-connector 8 pin male
2 × DC-connector 2 pin male
2 × bolt M3
2 × washer M3
solid copper wire (diam. 1 mm)
flexible copper wire
4 × cable isolator (diam. 3 mm)
4 × cable isolator (diam. 2 mm)
…continued
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2010
Philips 0603
13N-50-057/1
8140-12
P/H30X15WE
P/H20X10WE
Type
23N-50-057/1
8140-115
SIMX-F
Value
100 pF
10 μF
470 μF
10 Ω
12 mm
30 mm
30 mm
0.75 mm
BLF6G10L(S)-260PRN
2
Code number
1922.000.10134
1922.000.10033
Power LDMOS transistor
Remarks
needed for tuning
Suhner
Suhner
chromium nickle steel
chromium nickle steel
Souriau (Farnell)
Souriau (Farnell)
chromium nickle steel
chromium nickle steel
silicon isolated
© NXP B.V. 2010. All rights reserved.
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