ST7LITE49M STMicroelectronics, ST7LITE49M Datasheet - Page 172

• Manufacturer Part Number: ST7LITE49M
• Description: 8-bit MCU
• Manufacturer: STMicroelectronics

Specifications of ST7LITE49M

• 4 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection In-circuit Programming And In-application Programming (icp And Iap) Endurance: 10k write/erase cycles guaranteed Data retention
• 128 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55 °C.
• Clock Sources: Internal trimmable 8 MHz RC oscillator, auto-wakeup internal low power - low frequency oscillator, crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-halt, Auto-wakeup from Halt, Wait and Slow
• A/d Converter: 10 input channels

Electrical characteristics
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Figure 99. ADC accuracy characteristics
1023
1022
1021
7
6
5
4
3
2
1
0
V
SS
1
E
1LSB
O
Digital Result
2
IDEAL
3
=
V
------------------------------- -
4
DD
1024
–
5
V
1 LSB
SS
E
6
T
IDEAL
Doc ID 13562 Rev 3
E
7
L
(2)
E
D
1021 1022 1023 1024
(3)
(1)
E
G
V
DD
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer
curves.
EO=Offset Error: deviation between the first
actual transition and the first ideal one.
EG=Gain Error: deviation between the last
ideal transition and the last actual one.
ED=Differential Linearity Error: maximum
deviation between actual steps and the ideal
one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
V
in
(LSB
IDEAL
)
ST7LITE49M