BLW29 NXP Semiconductors, BLW29 Datasheet - Page 2

• Manufacturer Part Number: BLW29
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

halfpage
Philips Semiconductors
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B or C operated mobile transmitters
with a nominal supply voltage of
13,5 V. Because of the high gain and
excellent power handling capability,
the transistor is especially suited for
design of wide-band and
semi-wide-band v.h.f. amplifiers.
Together with a BFQ42 driver stage,
QUICK REFERENCE DATA
R.F. performance up to T
PIN CONFIGURATION
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
MODE OF OPERATION
VHF power transistor
c.w. class-B
c.w. class-B
1
4
Fig.1 Simplified outline and symbol.
h
2
= 25 C
13,5
12,5
V
MSB056
V
CE
handbook, halfpage
3
MHz
175
175
the chain can deliver 15 W with a
maximum drive power of 120 mW at
175 MHz. The transistor is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions with a supply over-voltage
to 16,5 V.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
f
P
15
15
W
L
MBB012
b
2
typ. 10, 5
dB
G
c
e
10
p
typ. 67
%
60
PINNING - SOT120
PIN
1
2
3
4
1,3
collector
emitter
base
emitter
z
i
j0,68
Product specification
DESCRIPTION
BLW29
180
mS
Y
L
j54