BLW29 NXP Semiconductors, BLW29 Datasheet - Page 3

• Manufacturer Part Number: BLW29
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
(dissipation = 15 W; T
August 1986
Collector-emitter voltage (V
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
R.F. power dissipation (f
Storage temperature
Operating junction temperature
handbook, halfpage
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
VHF power transistor
peak value
10
(A)
I C
10
1
1
1
Fig.2 D.C. SOAR.
T h = 70 C
mb
= 77 C, i.e. T
1 MHz); T
BE
10
= 0)
T mb = 25 C
1 MHz
V CE (V)
mb
h
= 25 C
= 70 C)
MGP414
10
2
3
handbook, halfpage
(W)
P rf
60
40
20
0
0
R
R
R
th j-mb(dc)
th j-mb(rf)
th mb-h
Fig.3
V
V
V
I
I
P
T
T
C(AV)
CM
stg
j
CESM
CEO
EBO
rf
short-time
operation
during mismatch
R.F. power dissipation;
V
continuous
d.c. operation
derate by 0.25 W/K
CE
=
=
=
16,5 V; f
50
max.
max.
max.
max.
max.
max.
max.
continuous
r.f. operation
65 to
derate by
T h ( C)
Product specification
0.3 W/K
1 MHz.
2,75 A
150
200
3,05 K/W
0,45 K/W
MGP415
36 V
18 V
53 W
3,7 K/W
BLW29
4 V
8 A
100
C
C