BLW29 NXP Semiconductors, BLW29 Datasheet - Page 8

• Manufacturer Part Number: BLW29
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1986
handbook, halfpage
T
P
VHF power transistor
(VSWR = 1)
h
S
Fig.11 R.F. SOAR (short-time operation during
handbook, halfpage
= 70 C; R
= P
P Lnom
V
(W)
(W)
P L
CE
Snom
30
20
10
V
0
CE
= 13,5 V;
0
25
20
15
10
at V
= 12, 5 V
mismatch); f = 175 MHz;
Fig.9 Typical values; f = 175 MHz.
th mb-h
1
CEnom
= 0,45 K/W; V
and VSWR = 1
1.1
T h = 25 C
CEnom
.
2
70 C
= 13,5 V or 12,5 V;
P S (W)
1.2
VSWR =
5
10
20
50
V CEnom
P Snom
V CE
MGP421
P S
MGP423
4
1.3
8
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
ratio.
OPERATING NOTE
Below 70 MHz a base-emitter resistor of 10
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
handbook, halfpage
S
/P
(dB)
V
Snom
G p
CE
25
20
15
10
V
5
0
CE
= 13,5 V;
0
) increases linearly with supply over-voltage
= 12, 5 V
Fig.10 Typical values; f = 175 MHz.
G p
10
20
70 C
Product specification
T h = 25 C
T h = 70 C
P L (W)
25 C
MGP422
BLW29
is
30
125
100
75
50
25
0
(%)