BLW29 NXP Semiconductors, BLW29 Datasheet - Page 6

• Manufacturer Part Number: BLW29
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
List of components:
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
August 1986
handbook, full pagewidth
C1
C2
C3a =
C4
C5
L1
L2
L3
L5
L7
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1
VHF power transistor
f (MHz)
=
=
=
=
=
=
=
=
=
=
175
175
2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C6 = C7 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3b = 47 pF ceramic capacitor (500 V)
1 nF ceramic capacitor
100 nF polyester capacitor
1
L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = strip (12 mm
4
2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2
R2 = 10
2
1
2
turn Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2
turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2
V
50
CE
13,5
12,5
carbon resistor
(V)
C1
P
6 mm); taps for C3a and C3b at 5 mm from transistor
L
15
15
(W)
C2
L1
typ. 1,34
R1
P
S
Fig.7 Test circuit; c.w. class-B.
1,5
(W)
L2
L3
C3a
C3b
typ. 10,5
G
p
T.U.T.
(dB)
10
6
L4
5 mm
C4
typ. 1,8
I
C
1,85
(A)
V CC
L5
L6
C5
L7
R2
typ. 67
C6
(%)
60
h
= 25 C
MGP419
C7
5 mm
1,3
5 mm
50
z
i
( )
Product specification
j0,68
BLW29
180
Y
L
(mS)
j54