BLW29 NXP Semiconductors, BLW29 Datasheet - Page 4

• Manufacturer Part Number: BLW29
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Measured under pulse conditions: t
August 1986
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain
Collector-emitter saturation voltage
Transition frequency at f = 100 MHz
Collector capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Collector-stud capacitance
j
= 25 C
VHF power transistor
V
open base; I
open collector; I
V
open base
R
I
I
I
I
C
C
E
C
I
I
BE
BE
BE
E
E
= I
= 1,75 A; V
= 5 A; I
= 100 mA; V
= 1,75 A; V
= 5 A; V
= 0; I
= 0; V
= 10
e
= 0; V
C
B
CE
= 15 mA
= 1 A
CB
C
CB
= 18 V
CE
= 100 mA
= 13,5 V
(1)
CB
CE
= 13,5 V
E
= 5 V
= 5 mA
= 13,5 V
= 13,5 V
(1)
(1)
p
200 s;
0,02.
4
V
V
V
I
E
E
h
V
f
f
C
C
C
CES
T
T
FE
(BR) CES
(BR)CEO
(BR)EBO
SBO
SBR
CEsat
c
re
cs
typ.
typ.
typ.
typ.
typ.
typ.
typ.
Product specification
10 to 80
900 MHz
825 MHz
1,5 V
36 V
18 V
40
43 pF
27 pF
BLW29
4 V
5 mA
4 mJ
4 mJ
2 pF