MBM29DL16XTE70PFTN Meet Spansion Inc., MBM29DL16XTE70PFTN Datasheet - Page 4

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MBM29DL16XTE70PFTN

Manufacturer Part Number
MBM29DL16XTE70PFTN
Description
Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit Dual Operation
Manufacturer
Meet Spansion Inc.
Datasheet
FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29DL16XTD/BD
■ FEATURES
■ PRODUCT LINE UP
■ PACKAGES
Ordering Part No.
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
• 0.33 μm Process Technology
• Simultaneous Read/Write operations (dual bank)
• Single 3.0 V read, program, and erase
DATA SHEET
Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”
in ■GENERAL DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Minimizes system level power requirements
48-pin plastic TSOP (1)
(FPT-48P-M19)
Marking Side
Part No.
V
V
CC
CC
= 3.3 V
= 3.0 V
Retired Product DS05-20874-8E_July 12, 2007
+0.3 V
–0.3 V
+0.6 V
–0.3 V
48-pin plastic TSOP (1)
Marking Side
(FPT-48P-M20)
-70/90
MBM29DL16XTD/MBM29DL16XBD
70
70
70
30
Dual Operation
48-ball plastic FBGA
(BGA-48P-M13)
DS05-20874-8E
90
90
90
35
(Continued)

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