MBM29DL16XTE70PFTN Meet Spansion Inc., MBM29DL16XTE70PFTN Datasheet - Page 50

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MBM29DL16XTE70PFTN

Manufacturer Part Number
MBM29DL16XTE70PFTN
Description
Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit Dual Operation
Manufacturer
Meet Spansion Inc.
Datasheet
50
MBM29DL16XTD/BD
■ ERASE AND PROGRAMMING PERFORMANCE
■ PIN CAPACITANCE
Notes : • Test conditions T
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP/ACC Pin Capacitance
Sector Erase Time
Word Programming Time
Byte Programming Time
Chip Programming Time
Program/Erase Cycle
• DQ
Parameter
Parameter
15
/A
−1
pin capacitance is stipulated by output capacitance.
A
= + 25 °C, f = 1.0 MHz
100,000
C
C
C
C
Min
Symbol
IN
OUT
IN2
IN3
Retired Product DS05-20874-8E_July 12, 2007
-70/90
Limits
Typ
V
V
V
V
16
1
8
OUT
IN
IN
IN
= 0
= 0
= 0
= 0
Test Setup
Max
360
300
10
50
cycle
Unit
μs
μs
s
s
Typ
8.5
17
6
8
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Comments
Max
7.5
12
10
18
Unit
pF
pF
pF
pF

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