IRG4PC50KD IRF, IRG4PC50KD Datasheet

no-image

IRG4PC50KD

Manufacturer Part Number
IRG4PC50KD
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
IRF
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC50KDPBF
Manufacturer:
VISHAY
Quantity:
2 000
Part Number:
IRG4PC50KDPBF
0
Company:
Part Number:
IRG4PC50KDPBF
Quantity:
9 000
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
I
I
I
t
V
P
P
T
T
R
R
R
R
Wt
C
C
CM
LM
F
FM
sc
J
STG
Generation 4 IGBTs offer highest efficiencies available
HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
CES
GE
D
D
qJC
qJC
qCS
qJA
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10µs @125°C, V
Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFRED
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 100°C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
GE
= 15V
Parameter
Parameter
TM
ultrafast,
G
Min.
300 (0.063 in. (1.6mm) from case)
n -c h a n n e l
IRG4PC50KD
10 lbf•in (1.1 N•m)
E
C
-55 to +150
Max.
6 (0.21)
± 20
200
600
104
104
280
Typ.
52
30
25
10
78
0.24
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
GE
V
TO-247AC
CES
PD -91582B
= 15V, I
Max.
0.64
0.83
40
= 600V
= 1.84V
C
= 30A
Units
Units
g (oz)
°C/W
°C
µs
A
V
W
V
1
12/3/98

Related parts for IRG4PC50KD

IRG4PC50KD Summary of contents

Page 1

... Junction-to-Ambient, typical socket mount qJA Wt Weight www.irf.com G TM ultrafast 300 (0.063 in. (1.6mm) from case) Min. — — — — — PD -91582B IRG4PC50KD Short Circuit Rated UltraFast IGBT 600V CES V = 1.84V CE(on) typ 15V 30A TO-247AC Max ...

Page 2

... IRG4PC50KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) /DT Temperature Coeff. of Threshold Voltage DV GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... T = 150 15V GE 20µs PULSE WIDTH 10 Fig Typical Transfer Characteristics IRG4PC50KD oth: D uty 50 5° °C sink riv ified ipation = 10 ° ...

Page 4

... IRG4PC50KD Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3.0 2.0 1.0 100 125 150 ° Fig Typical Collector-to-Emitter Voltage 0.001 t , Rectangular Pulse Duration (sec) ...

Page 5

... G Fig Typical Switching Losses vs. Gate Resistance www.irf.com f = 1MHz + C C SHORTED ies C oes C res 10 100 IRG4PC50KD 400V 30A 120 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 R = Ohm 5 ...

Page 6

... IRG4PC50KD Ohm 5 150 C ° 480V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 1 0.6 1.0 1 lta Fig Maximum Forward Voltage Drop vs. ...

Page 7

... I = 10A 600 F 300 0 100 1000 /dt Fig Typical Stored Charge vs 10000 1000 100 100 Fig Typical di IRG4PC50KD ° ° 50A 10A /µ ° ...

Page 8

... IRG4PC50KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ...

Page 9

... F 100 V www.irf.com D.U. 800V IRG4PC50KD 800V @25°C ...

Page 10

... IRG4PC50KD =20V; pulse width limited by maximum junction temperature =80%( =20V, L=10µ CES £ µ £ ...

Related keywords