IRG4PC50KD IRF, IRG4PC50KD Datasheet - Page 4

• Manufacturer Part Number: IRG4PC50KD
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: IRF

IRG4PC50KD
4
0.001
0.01
Fig. 4 - Maximum Collector Current vs.
0.1
0.00001
1
60
50
40
30
20
10
0
25
0.50
0.20
0.10
0.05
0.02
0.01
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
t , Rectangular Pulse Duration (sec)
1
°
125
0.001
150
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
0.01
V
80 us PULSE WIDTH
vs. Junction Temperature
GE
= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
20
DM
40
x Z
1
0.1
60
thJC
2
P
DM
80 100 120 140 160
+ T
I =
I =
I =
C
C
C
C
t
1
www.irf.com
t
60
30
15
2
°
A
A
A
1