IRG4PC50KD IRF, IRG4PC50KD Datasheet - Page 2

• Manufacturer Part Number: IRG4PC50KD
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: IRF

IRG4PC50KD
Switching Characteristics @ T
2
Electrical Characteristics @ T
E
t
L
r
V
DV
V
V
DV
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
t
t
t
t
E
C
C
C
t
I
Q
di
E
CES
GES
d(on)
r
d(off)
f
sc
d(on)
d(off)
f
rr
rr
ts
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ies
oes
res
g
ge
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/DT
/DT
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
—
17
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3200
0.47
2.19
1.79
2.45
3.53
1.84
1.61
0.84
200
150
310
170
370
105
112
420 1200
250
160
-12
1.3
1.2
4.5
8.0
13
—
—
24
—
—
25
85
63
49
95
61
46
95
50
—
—
±100
6500
250
300
127
220
140
160
375
2.2
6.0
1.7
1.5
3.0see figures 9,10,18
—
38
75
10
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
nC
mJ
mJ
nH
nC
pF
V
V
S
V
ns
µs
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
= 30A
= 52A
= 25A, T
= 25A
= 25A, T
= 30A
= 30A, V
= 30A, V
= 25°C
= 150°C,
= 25°C see figure
= 125°C
= 25°C see figure
= 125°C
= 25°C see figure
= 125°C
= 25°C see figure
= 125°C
= V
= V
= 100V, I
= 400V
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
C
C
J
J
CC
CC
CE
CE
C
C
Conditions
= 150°C
= 150°C
Conditions
= 250µA
= 1.0mA
G
G
G
C
= 250µA
= 250µA
J
= 480V
= 480V
= 600V
= 600V, T
= 5.0W
= 10W , V
= 5.0W
= 30A
= 125°C
14
15
16
17
see figure 8
see figures 11,18
see figure 7
V
see figures 2, 5
di/dt 200A/µs
see figure 13
GE
V
J
www.irf.com
CPK
I
R
F
= 150°C
= 15V
= 200V
= 25A
< 500V