IRG4PC50KD IRF, IRG4PC50KD Datasheet - Page 5

• Manufacturer Part Number: IRG4PC50KD
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: IRF

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Fig. 9 - Typical Switching Losses vs.
5000
4000
3000
2000
1000
4.5
4.0
3.5
3.0
2.5
2.0
0
Fig. 7 - Typical Capacitance vs.
0
1
V
V
T
I
J
C
CC
GE
R
= 25
= 480V
= 15V
Gate Resistance
= 30A
Collector-to-Emitter Voltage
G
V
, Gate Resistance
CE
10
V
C
C
C
°
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
C
G
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
C res
C ies
C oes
( W )
30
C
ce
(O
SHORTED
40
)
100
50
Fig. 10 - Typical Switching Losses vs.
100
0.1
10
1
20
16
12
-60 -40 -20
Fig. 8 - Typical Gate Charge vs.
8
4
0
R
V
V
0
GE
CC
V
G
I
CC
C
Junction Temperature
= 15V
= 480V
= Ohm
= 400V
= 30A
5.0
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
J
40
Q , Total Gate Charge (nC)
W
G
0
20
80
40
IRG4PC50KD
60
120
80 100 120 140 160
I =
I =
I =
C
C
C
°
160
60
30
15
A
A
A
200
5