IRG4PC50KD IRF, IRG4PC50KD Datasheet - Page 8

• Manufacturer Part Number: IRG4PC50KD
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: IRF

IRG4PC50KD
8
Fig. 18c -
Fig. 18a -
I
LM
V c c
80%
of Vce
, E
td(on)
10% + V g
10% Ic
on
, E
Test Waveforms for Circuit of Fig. 18a,
off(diode)
t1
Test Circuit for Measurement of
Defining E
V c e
tr
430µF
, t
rr
, Q
5% V c e
90% Ic
rr
on
, I
, t
rr
G A T E V O LT A G E D .U .T .
+V g
, t
d(on)
d(on)
Same type
device as
D .U.T.
D .U .T.
, t
, t
r
t2
E on =
r
, t
D U T V O LT A G E
A N D C U R R E N T
Ipk
d(off)
t1
V c e ie dt
Vce Ic dt
t2
, t
Ic
f
Fig. 18b -
V
ge
V
I
C
C
5%
Fig. 18d -
10%
90%
Test Waveforms for Circuit of Fig. 18a, Defining
V pk
D IO D E R E V E R S E
R E C O V E R Y E N E R G Y
Ic
t
10% V c c
tx
d(on)
Test Waveforms for Circuit of Fig. 18a,
Defining E
Irr
E
off
10%
, t
t
r
E
t3
d(off)
on
trr
rec
E = (E
, t
ts
, t
f
rr
, Q
on
t
d(off)
+E
D IO D E R E C O V E R Y
W A V E F O R M S
t4
rr
90%
E rec =
, I
off
10% Irr
rr
)
Q rr =
E
t
f
off
t3
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V d id dt
Vd Ic dt
t4
tx
id dt
Ic dt
trr
V c c
t=5µs