MB81ES171625 Fujitsu Media Devices Limited, MB81ES171625 Datasheet - Page 24

• Manufacturer Part Number: MB81ES171625
• Description: SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
• Manufacturer: Fujitsu Media Devices Limited

24
MB81ES171625/173225-15-X
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
*1 : All voltages are referenced to V
*4 : The maximum junction temperature of FCRAM (Tj) should not be more than 125 C.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
Voltage of V
Voltage at Any Pin Relative to V
Short Circuit Output Current
Storage Temperature
Supply Voltage*
Input High Voltage *
Input Low Voltage *
Ambient Temperature
Junction Temperature*
*2 : Overshoot limit: V
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Tj is represented by the power consumption of FCRAM (P
package( ja),and the maximum ambient temperature of the SiP(T
TjMax[ C] = T
3.0 V
V
V
V
3.0 V for pulse width
pulse width measured at 50% of pulse amplitude.
IH
IH (Min)
IL
PMax[W] = P
CC
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
Parameter
Parameter
Supply Relative to V
1
Pulse width
A
FCRAM
Max[ C] + ja[ C/W]
3
2
IH
4
+ P
(Max) =
5 ns acceptable,
D
50% of pulse amplitude
5 ns
SS
SS
SS
.
V
V
Symbol
DD
SS
V
V
, V
, V
T
Tj
PMax[W]
IH
IL
A
V
V
Symbol
DDQ
SSQ
DD
IN
T
I
, V
, V
OUT
STG
OUT
DDQ
*3 : Undershoot limit: V
V
V
V
V
-1.5 V
DDQ
IH
IL (Max)
IL
1.65
Min
FCRAM
0.3
V
pulse width measured at 50% of pulse amplitude.
0
40
40
SS
0.4
–1.5 V for pulse width
) and Logic LSI(P
A
Min
Max).
0.5
0.5
13
55
Value
Pulse width
Typ
1.8
0
Rating
IL
(Min) =
D
),the thermal resistance of the
50% of pulse amplitude
Max
V
125
3.0
3.0
DDQ
13
5 ns
Max
1.95
5 ns acceptable,
0.4
125
0
85
(Referenced to Vss)
0.3
Unit
mA
Unit
V
V
C
V
V
V
V
C
C