MB81ES171625 Fujitsu Media Devices Limited, MB81ES171625 Datasheet - Page 33

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MB81ES171625

Manufacturer Part Number
MB81ES171625
Description
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
Manufacturer
Fujitsu Media Devices Limited
Datasheet
1.
2.
*1: The latency of CKE (
*2: During the read mode, burst counter will not be increased/decreased at the next clock of CSUS command.
*3: During the write mode, data at the next clock of CSUS command is ignored.
*1: The Precharge command (PRE or PALL) should be asserted if any bank is active and in the burst mode.
*2: The NOP command should be asserted in conjunction with CKE.
*3: The ACTV command can be latched after t
TIMING DIAGRAMS
CLK
CKE
CLK
(Internal)
DQ
(Read)
DQ
(Write)
CLK
CKE
Command
Clock Enable - READ and WRITE Suspend (@ BL = 4)
Clock Enable - Power Down Entry and Exit
Output data remains the same data.
NOP
*
1
CSUS command
CKE
) is one clock.
PD (NOP)
t
SI
D1
Q1
CKE
t
HI
(1 clock)
WRITTEN
t
SI
*
NOT
Q2
1
SI
MB81ES171625/173225-15-X
t
*
*
HI
1 clock (Min) .
2
3
(NO CHANGE)
CSUS command
t
H or L
REF
t
SI
D2
(Max)
CKE
t
HI
*
2
(1 clock)
WRITTEN
NOT
*
Q3
1
*
*
3
2
(NO CHANGE)
t
SI
NOP
D3
1 clock (Min)
*
2
*
2
ACTV *
D4
Q4
3
33

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